vishay sd103a / 103b / 103c document number 85754 rev. 1.3, 10-mar-04 vishay semiconductors www.vishay.com 1 94 9367 schottky diodes features ? for general purpose applications the sd103 series is a metal-on-silicon schottky barrier device which is protected by a pn junction guard ring. the low forward voltage drop and fast switching make it ideal for protection of mos devices, steer- ing, biasing and coupling diodes for fast switching and low logic level applications. other applications are click suppression, efficient full wave bridges in telephone subsets, and block- ing diodes in rechargeable low voltage battery sys- tems. these diodes are also available in the sod-123 case with type designations sd103aw...sd103cw and in the minimelf case with type designations ll103a thru ll103c. integrated applications hf-detector protection circuit small battery charger ac-dc / dc-dc converters mechanical data case: do-35 glass case weight: approx. 130 mg packaging codes/options: d7/10 k per 13 " reel (52 mm tape), 20 k/box d8/10 k per ammo tape (52 mm tape), 20 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided that leads at a distance of 4 mm from case are kept at ambient temperature thermal characteristics t amb = 25 c, unless otherwise specified 1) valid provided that leads at a distance of 4 mm from case are kept at ambient temperature parameter test condition part symbol value unit peak inverse voltage sd103a v r 40 v sd103b v r 30 v sd103c v r 20 v power dissipation (infinite heatsink) p tot 400 1) mw single cycle surge 60 hz sine wave i fsm 15 a parameter test condition symbol value unit thermal resistance junction to ambient air r ja 0.3 1) k/w junction temperature t j 125 1) c storage temperature range t s - 55 to + 150 1) c
www.vishay.com 2 document number 85754 rev. 1.3, 10-mar-04 vishay sd103a / 103b / 103c vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit reverse breakdown voltage i r = 50 a sd103a v (br)r 40 v sd103b v (br)r 30 v sd103c v (br)r 20 v leakage current v r = 30 v sd103a i r 5 a v r = 20 v sd103b i r 5 a v r = 10 v sd103c i r 5 a forward voltage drop i f = 20 ma v f 0.37 v i f = 200 ma v f 0.6 v diode capacitance v r = 0 v, f = 1 mhz c d 50 pf reverse recovery time i f = i r = 50 to 200 ma, recover to 0.1 i r t rr 10 ns fig. 1 forward current vs. forward voltage fig. 2 forward current vs. forward voltage i ? forward current ( ma) 0.001 0.010 0.100 1.000 10.000 100.000 1000.000 0 100 200 300 400 500 600 700 800 900 1000 v f ? forward voltage ( mv ) 16765 f 1000 100 10 1 0.1 0.01 i ? forward current (a) 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 v f ? forward voltag e(v) 16766 f fig. 3 reverse current vs. junction temperature fig. 4 diode capacitance vs. reverse voltage 1 10 100 1000 10000 0 20 40 60 80 100 120 140 160 t j ? junction temperature ( c) 16767 i ? reverse current (a ) r 0 5 10 15 20 25 30 0 5 10 15 20 25 30 v r ? reverse voltag e(v) 16768 c ? diode capacitance ( pf ) d f=1mhz
vishay sd103a / 103b / 103c document number 85754 rev. 1.3, 10-mar-04 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) fig. 5 typ. non repetitive forward surge current vs. pulse width 0 5 10 15 20 25 0.1 1.0 10.0 t p ? pulse width ( ms ) 16769 i? typ. non repetitve forward surge current (a) tot cathode identification ? 2.0 (0.08) max. ? 0.55 (0.02) max. 3.9 (0.15) max. 26 (1.02) min. technical drawings according to din specifications 94 9366 standard glass case 54 a 2 din 41880 jedec do 35 26 (1.02) min.
www.vishay.com 4 document number 85754 rev. 1.3, 10-mar-04 vishay sd103a / 103b / 103c vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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